Dispersion of the refractive index in high-k dielectrics
- Autores: Shvets V.A.1,2, Kruchinin V.N.1, Gritsenko V.A.1,2,3
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Edição: Volume 123, Nº 5 (2017)
- Páginas: 728-732
- Seção: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/165565
- DOI: https://doi.org/10.1134/S0030400X17110194
- ID: 165565
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Resumo
A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.
Sobre autores
V. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: shvets@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: shvets@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
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