Dispersion of the refractive index in high-k dielectrics
- Authors: Shvets V.A.1,2, Kruchinin V.N.1, Gritsenko V.A.1,2,3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Issue: Vol 123, No 5 (2017)
- Pages: 728-732
- Section: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/165565
- DOI: https://doi.org/10.1134/S0030400X17110194
- ID: 165565
Cite item
Abstract
A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.
About the authors
V. A. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: shvets@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. N. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: shvets@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
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