Dispersion of the refractive index in high-k dielectrics
- Авторы: Shvets V.A.1,2, Kruchinin V.N.1, Gritsenko V.A.1,2,3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Выпуск: Том 123, № 5 (2017)
- Страницы: 728-732
- Раздел: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/165565
- DOI: https://doi.org/10.1134/S0030400X17110194
- ID: 165565
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Аннотация
A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.
Об авторах
V. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: shvets@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: shvets@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
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