To the question of detecting single domains based on the anomalous Hall effect
- Авторлар: Stepushkin M.V.1
-
Мекемелер:
- Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
- Шығарылым: Том 69, № 9 (2024)
- Беттер: 912-917
- Бөлім: НАНОЭЛЕКТРОНИКА
- URL: https://journal-vniispk.ru/0033-8494/article/view/282003
- DOI: https://doi.org/10.31857/S0033849424090114
- EDN: https://elibrary.ru/HRBEQV
- ID: 282003
Дәйексөз келтіру
Аннотация
Numerical modeling of the anomalous Hall effect in thin-film structures with strong perpendicular magnetic anisotropy was performed. The dependence of the Hall response on the position of a single domain inside the measuring cell (the Hall cross) was found. Corrections associated with the imperfection of the structure — rounded corners of the cross — were determined. The contribution to the Hall response of the skyrmion caused by the anomalous Hall effect was calculated.
Негізгі сөздер
Толық мәтін

Авторлар туралы
M. Stepushkin
Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
Хат алмасуға жауапты Автор.
Email: cokpoweheu@yandex.ru
Ресей, Vvedenskii Square, 1, Fryazino, Moscow oblast, 141190
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