To the question of detecting single domains based on the anomalous Hall effect
- 作者: Stepushkin M.V.1
-
隶属关系:
- Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
- 期: 卷 69, 编号 9 (2024)
- 页面: 912-917
- 栏目: НАНОЭЛЕКТРОНИКА
- URL: https://journal-vniispk.ru/0033-8494/article/view/282003
- DOI: https://doi.org/10.31857/S0033849424090114
- EDN: https://elibrary.ru/HRBEQV
- ID: 282003
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详细
Numerical modeling of the anomalous Hall effect in thin-film structures with strong perpendicular magnetic anisotropy was performed. The dependence of the Hall response on the position of a single domain inside the measuring cell (the Hall cross) was found. Corrections associated with the imperfection of the structure — rounded corners of the cross — were determined. The contribution to the Hall response of the skyrmion caused by the anomalous Hall effect was calculated.
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作者简介
M. Stepushkin
Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
编辑信件的主要联系方式.
Email: cokpoweheu@yandex.ru
俄罗斯联邦, Vvedenskii Square, 1, Fryazino, Moscow oblast, 141190
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