To the question of detecting single domains based on the anomalous Hall effect
- Authors: Stepushkin M.V.1
-
Affiliations:
- Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
- Issue: Vol 69, No 9 (2024)
- Pages: 912-917
- Section: НАНОЭЛЕКТРОНИКА
- URL: https://journal-vniispk.ru/0033-8494/article/view/282003
- DOI: https://doi.org/10.31857/S0033849424090114
- EDN: https://elibrary.ru/HRBEQV
- ID: 282003
Cite item
Abstract
Numerical modeling of the anomalous Hall effect in thin-film structures with strong perpendicular magnetic anisotropy was performed. The dependence of the Hall response on the position of a single domain inside the measuring cell (the Hall cross) was found. Corrections associated with the imperfection of the structure — rounded corners of the cross — were determined. The contribution to the Hall response of the skyrmion caused by the anomalous Hall effect was calculated.
Keywords
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About the authors
M. V. Stepushkin
Fryazino Branch Kotelnikov Institute of Radio Engineering and Electronic RAS
Author for correspondence.
Email: cokpoweheu@yandex.ru
Russian Federation, Vvedenskii Square, 1, Fryazino, Moscow oblast, 141190
References
- Kimbell G., Kim C., Wu W. et al. // Commun. Mater. 2022. V. 3. Article No.19 https://doi.org/10.1038/s43246-022-00238-2
- Sapozhnikov M.V., Gusev N.S., Gusev S.A. et al. // Phys. Rev. B. 2021. V. 103. № 5. Article No. 054429. https://doi.org/10.1103/PhysRevB.103.054429
- Webb B.C., Schultz S. // IEEE Trans.1988. V. Mag-24. № 6. P. 3006. https://doi.org/10.1109/20.92316
- Alexandrou M., Nutter P.W., Delalande M. et al. // J. Appl. Phys. 2010. V.108. № 4. Article No. 043920 https://doi.org/10.1063/1.3475485
- Lee S.-H., Nam Y,-S., Kim M. et al. // Current Appl. Phys. 2022. V.41. P.178. https://doi.org/10.1016/j.cap.2022.07.005
- Ibrahim I.S., Schweigert V.A., Peeters F.M. // Phys. Rev. B 1998. V. 57. № 24. P.15416. https://doi.org/10.1103/PhysRevB.57.15416
- Cornelissens Y.G., Peeters F.M. // J. Appl. Phys. 2002. V. 92. № 4. P.2006. https://doi.org/10.1063/1.1487909
- Bending S.J., Oral A. // J. Appl. Phys. 1997. V.81. № 8. P.3721. https://doi.org/10.1063/1.365494
- Thiaville A., Belliard L., Majer D.E. et al. // J. Appl. Phys. 1997. V. 82. № 7. P.3182. https://doi.org/10.1063/1.365623
- Liu S., Guillou H., Kent A.D. et al. // J. Appl. Phys. 1998. V. 83. № 11. P.6161. https://doi.org/10.1063/1.367485
- Guillou H., Kent A.D., Stupian G.W., Leung M.S. // J. Appl. Phys. 2023. V. 93. № 5. P.2746. https://doi.org/10.1063/1.1543651
- Wang X.S., Yuan H.Y., Wang X.R. // Commun. Phys. 2018. V.1. Article No. 31. https://doi.org/10.1038/s42005-018-0029-0
- Komineas S., Melcher C., Venakides S. // Nonlinearity. 2020. V.33. № 7. P.3395. https://doi.org/10.1088/1361-6544/ab81eb
- Wu H., Hu X., Jing K. et al. // Commun. Phys. 2021. V. 4. Article No. 210. https://doi.org/10.1038/s42005-021-00716-y
- Büttner F., Lemesh I., Beach G.S.D // Sci. Rep. 2018. V. 8. Article No.4464. 10.1038/s41598-018-22242-8' target='_blank'>https://doi: 10.1038/s41598-018-22242-8
- Maccariello D., Legrand W., Reyren N. et al. // Nature Nanotechnol. 2018. V. 13. №3. P.233. https://doi.org/10.1038/s41565-017-0044-4
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