Email this article Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation
- Authors: Oksengendler B.L.1, Dzhurabekova F.G.2, Maksimov S.E.1, Turaev N.Y.1
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Affiliations:
- Institute of Ion-Plasma and Laser Technologies
- Helsinki Institute of Physics and Department of Physics
- Issue: Vol 10, No 2 (2016)
- Pages: 393-397
- Section: Article
- URL: https://journal-vniispk.ru/1027-4510/article/view/188504
- DOI: https://doi.org/10.1134/S1027451016020324
- ID: 188504
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Abstract
A synergetic theory of the radiation damage of semiconductor equipment is presented. The general approach is applied to explain the failure of the space vehicle “Fobos-Grunt.”
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About the authors
B. L. Oksengendler
Institute of Ion-Plasma and Laser Technologies
Author for correspondence.
Email: oksengendlerbl@yandex.ru
Uzbekistan, Tashkent, 100125
F. G. Dzhurabekova
Helsinki Institute of Physics and Department of Physics
Email: oksengendlerbl@yandex.ru
Finland, Helsinki, FI-00014
S. E. Maksimov
Institute of Ion-Plasma and Laser Technologies
Email: oksengendlerbl@yandex.ru
Uzbekistan, Tashkent, 100125
N. Yu. Turaev
Institute of Ion-Plasma and Laser Technologies
Email: oksengendlerbl@yandex.ru
Uzbekistan, Tashkent, 100125
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