Modification of YBa 2 Cu 3 O 7–δ  thin films by ion implantation

V. K. Vasiliev; D. S. Korolev; S. A. Korolev; D. V. Masterov; A. N. Mikhaylov; A. I. Okhapkin; S. A. Pavlov; A. E. Parafin; P. A. Yunin; E. V. Skorokhodov; D. I. Tetelbaum

doi:10.1134/S1027451016020403

Modification of YBa₂Cu₃O_7–δ thin films by ion implantation

Authors: Vasiliev V.K.¹, Korolev D.S.¹, Korolev S.A.², Masterov D.V.², Mikhaylov A.N.¹, Okhapkin A.I.²^,1, Pavlov S.A.², Parafin A.E.²^,1, Yunin P.A.²^,1, Skorokhodov E.V.²^,1, Tetelbaum D.I.¹
Affiliations:
1. Lobachevsky State University
2. Institute for Physics of Microstructures
Issue: Vol 10, No 2 (2016)
Pages: 438-440
Section: Article
URL: https://journal-vniispk.ru/1027-4510/article/view/188663
DOI: https://doi.org/10.1134/S1027451016020403
ID: 188663

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Abstract

The formation of a topological structure in thin films of the high-temperature superconductor YBa₂Cu_3O_7–δ (YBCO) using ion implantation is studied. The crystal structure and electrical properties of the initial film and the formed insulating regions are investigated. The critical temperature and critical current are measured for microbridges with a width of 3–50 μm fabricated by ion implantation. The results indicate the effectiveness of the ion-implantation method for manufacturing topological structures in YBCO films.

Keywords

YВСО films, ion implantation, topological structure

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Modification of YBa2Cu3O7–δ thin films by ion implantation

Full Text

Abstract

Keywords

About the authors

Supplementary files

Modification of YBa₂Cu₃O_7–δ thin films by ion implantation