Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Carbon Systems
Carbon Systems
Issue
Title
File
Vol 50, No 8 (2016)
Electromagnetic radiation of electrons in corrugated graphene
(Eng)
Ktitorov S.A., Myhamadiarov R.I.
Vol 50, No 8 (2016)
Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications
(Eng)
Antonova I.V., Kotin I.A., Popov V.I., Vasileva F.D., Kapitonov A.N., Smagulova S.A.
Vol 50, No 7 (2016)
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6
H
-SiC (000
\(\bar 1\)
) in vacuum
(Eng)
Kotousova I.S., Lebedev S.P., Lebedev A.A.
Vol 50, No 6 (2016)
Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models
(Eng)
Davydov S.Y.
Vol 50, No 4 (2016)
Prediction of the stability and electronic properties of carbon nanotori synthesized by a high-voltage pulsed discharge in ethanol vapor
(Eng)
Glukhova O.E., Kondrashov V.A., Nevolin V.K., Bobrinetsky I.I., Savostyanov G.V., Slepchenkov M.M.
Vol 50, No 3 (2016)
Model of Adsorption on Amorphous Graphene
(Eng)
Davydov S.Y.
Vol 50, No 2 (2016)
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice
(Eng)
Kryuchkov S.V., Kukhar’ E.I.
26 - 32 of 32 Items
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