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Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A.V., Murin D.B., Pivovarenok S.A.
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V.Y., Dubinov A.A., Kudryavtsev K.E., Yunin P.A., Drozdov M.N., Vikhrova O.V., Nekorkin S.M., Zvonkov B.N.
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P.V., Lenshin A.S., Fedyukin A.V., Goloshchapov D.L., Lukin A.N., Arsentyev I.N., Zhabotinsky A.V.
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I.S., Pushkarev S.S., Grekhov M.M., Vinichenko A.N., Lavrukhin D.V., Kolentsova O.S.
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G.B., Klimov E.A., Grekhov M.M., Pushkarev S.S., Lavrukhin D.V., Maltsev P.P.
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V.M., Solonitsyna A.P., Makarevskaya E.A., Novikov D.A.
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
Kumekov S.E., Mustafin A.T., Mussatay S.S.
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A.V., Kulkova S.E.
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Dikareva N.V., Zvonkov B.N., Samartsev I.V., Nekorkin S.M., Baidus N.V., Dubinov A.A.
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I.
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
Seredin P.V., Fedyukin A.V., Terekhov V.A., Barkov K.A., Arsentyev I.N., Bondarev A.D., Fomin E.V., Pikhtin N.A.
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E.V., Gudovskikh A.S., Lazarenko A.A., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Morozov I.A., Egorov A.Y.
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Kryzhanovskaya N.V., Maximov M.V., Blokhin S.A., Bobrov M.A., Kulagina M.M., Troshkov S.I., Zadiranov Y.M., Lipovskii A.A., Moiseev E.I., Kudashova Y.V., Livshits D.A., Ustinov V.M., Zhukov A.E.
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N.D., Gutkin A.A., Brunkov P.N.
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomskiy V.N., Bugrov V.E.
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A.A., Neizvestny I.G., Shwartz N.L.
Vertical Field-Effect Transistor with a Controlling GaAs-Based pn Junction
Vostokov N.V., Daniltsev V.M., Kraev S.A., Krukov V.L., Skorokhodov E.V., Strelchenko S.S., Shashkin V.I.
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M.V., Nadtochiy A.M., Shernyakov Y.M., Payusov A.S., Vasil’ev A.P., Ustinov V.M., Serin A.A., Gordeev N.Y., Zhukov A.E.
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