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Volume 50, Nº 2 (2016)
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A., Murin D., Pivovarenok S.
PDF
(Eng)
Volume 50, Nº 5 (2016)
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
Aleshkin V., Dubinov A., Kudryavtsev K., Yunin P., Drozdov M., Vikhrova O., Nekorkin S., Zvonkov B.
PDF
(Eng)
Volume 52, Nº 9 (2018)
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P., Lenshin A., Fedyukin A., Goloshchapov D., Lukin A., Arsentyev I., Zhabotinsky A.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Galiev G., Klimov E., Grekhov M., Pushkarev S., Lavrukhin D., Maltsev P.
PDF
(Eng)
Volume 53, Nº 12 (2019)
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Dikareva N., Zvonkov B., Samartsev I., Nekorkin S., Baidus N., Dubinov A.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Alekseev P., Dunaevskiy M., Mikhailov A., Lebedev S., Lebedev A., Ilkiv I., Khrebtov A., Bouravleuv A., Cirlin G.
PDF
(Eng)
Volume 50, Nº 5 (2016)
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Zhukov A., Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kaliteevski M., Ivanov K., Kryzhanovskaya N., Maximov M., Alferov Z.
PDF
(Eng)
Volume 50, Nº 4 (2016)
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.
PDF
(Eng)
Volume 53, Nº 11 (2019)
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
Seredin P., Fedyukin A., Terekhov V., Barkov K., Arsentyev I., Bondarev A., Fomin E., Pikhtin N.
PDF
(Eng)
Volume 52, Nº 12 (2018)
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Samartsev I., Nekorkin S., Zvonkov B., Aleshkin V., Dubinov A., Pashenkin I., Dikareva N., Chigineva A.
PDF
(Eng)
Volume 50, Nº 5 (2016)
GaAs/InGaAsN heterostructures for multi-junction solar cells
Nikitina E., Gudovskikh A., Lazarenko A., Pirogov E., Sobolev M., Zelentsov K., Morozov I., Egorov A.
PDF
(Eng)
Volume 50, Nº 3 (2016)
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Kryzhanovskaya N., Maximov M., Blokhin S., Bobrov M., Kulagina M., Troshkov S., Zadiranov Y., Lipovskii A., Moiseev E., Kudashova Y., Livshits D., Ustinov V., Zhukov A.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N., Gutkin A., Brunkov P.
PDF
(Eng)
Volume 52, Nº 12 (2018)
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
PDF
(Eng)
Volume 50, Nº 5 (2016)
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Egorov A., Karachinsky L., Novikov I., Babichev A., Nevedomskiy V., Bugrov V.
PDF
(Eng)
Volume 50, Nº 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E., Khananova A., Obolensky S., Zemlyakov V., Sveshnikov Y., Egorkin V., Ivanov V., Medvedev G., Smotrin D.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Spirina A., Neizvestny I., Shwartz N.
PDF
(Eng)
Volume 53, Nº 10 (2019)
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
PDF
(Eng)
Volume 52, Nº 10 (2018)
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
Maximov M., Nadtochiy A., Shernyakov Y., Payusov A., Vasil’ev A., Ustinov V., Serin A., Gordeev N., Zhukov A.
PDF
(Eng)
Volume 50, Nº 2 (2016)
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds
Gromov D., Maltsev P., Polevich S.
PDF
(Eng)
Volume 53, Nº 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
Volume 53, Nº 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A., Pavlov D., Shengurov V., Denisov S., Chalkov V., Baidus N., Rykov A., Kryukov R.
PDF
(Eng)
Volume 50, Nº 2 (2016)
GaAs structures with a gate dielectric based on aluminum-oxide layers
Kalentyeva I., Vikhrova O., Zdoroveyshchev A., Danilov Y., Kudrin A.
PDF
(Eng)
Volume 53, Nº 16 (2019)
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
Berdnikov Y., Sibirev N., Koryakin A.
PDF
(Eng)
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