Electronic Properties of Semiconductors

标题 文件
卷 52, 编号 2 (2018) Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime PDF
(Eng)
Ormont M., Zvyagin I.
卷 52, 编号 2 (2018) Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals PDF
(Eng)
Mustafaeva S., Asadov S., Kerimova E.
卷 52, 编号 2 (2018) Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures PDF
(Eng)
Kažukauskas V., Garbačauskas R., Savicki S.
卷 52, 编号 2 (2018) Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs pin Structures on the Relaxation time of Nonequilibrium Carriers PDF
(Eng)
Sobolev M., Soldatenkov F.
卷 52, 编号 1 (2018) On Mobility of Definite Energy Charge Carriers PDF
(Eng)
Belousov Y., Gorelkin V., Chernousov I.
卷 52, 编号 1 (2018) Effect of Hydrostatic Pressure on the Static Permittivity of Germanium PDF
(Eng)
Musaev A.
卷 51, 编号 12 (2017) Radiation-produced defects in germanium: Experimental data and models of defects PDF
(Eng)
Emtsev V., Kozlovski V., Poloskin D., Oganesyan G.
卷 51, 编号 12 (2017) Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method PDF
(Eng)
El Ouchdi A., Bouazza B., Belhadji Y., Massoum N.
卷 51, 编号 10 (2017) Effects of local photoexcitation of high-concentration charge carriers in silicon PDF
(Eng)
Musaev A.
卷 51, 编号 9 (2017) Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper PDF
(Eng)
Prokofieva L., Nasredinov F., Konstantinov P., Shabaldin A.
卷 51, 编号 9 (2017) Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range PDF
(Eng)
Karachinsky L., Novikov I., Blokhin S., Bobrov M., Zadiranov Y., Troshkov S., Egorov A., Babichev A., Kryzhanovskaya N., Moiseev E., Gladyshev A.
卷 51, 编号 9 (2017) Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon PDF
(Eng)
Sobolev N., Kalyadin A., Shek E., Shtel’makh K.
卷 51, 编号 9 (2017) Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties PDF
(Eng)
Seredin P., Goloshchapov D., Lenshin A., Lukin A., Khudyakov Y., Arsentyev I., Prutskij T.
卷 51, 编号 8 (2017) Complex structure of optical transitions from the core d-levels of InAs and InSb crystals PDF
(Eng)
Sobolev V., Perevoshchikov D.
卷 51, 编号 8 (2017) Impurity levels in Hg3In2Te6 crystals PDF
(Eng)
Chupyra S., Grushka O., Bilichuk S.
卷 51, 编号 7 (2017) Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it PDF
(Eng)
Gaidar G., Baranskii P.
卷 51, 编号 7 (2017) Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals PDF
(Eng)
Abdullayev N., Jafarli K., Aliguliyeva K., Aliyeva L., Kahramanov S., Nemov S.
卷 51, 编号 6 (2017) Electrical properties of ZnSe crystals doped with transition elements PDF
(Eng)
Nitsuk Y., Vaksman Y.
卷 51, 编号 6 (2017) Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field PDF
(Eng)
Rekhviashvili S., Alikhanov A.
卷 51, 编号 6 (2017) Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates PDF
(Eng)
Galiev G., Klochkov A., Vasil’evskii I., Klimov E., Pushkarev S., Vinichenko A., Khabibullin R., Maltsev P.
卷 51, 编号 5 (2017) Ab initio calculations of phonon dispersion in CdGa2Se4 PDF
(Eng)
Dzhakhangirli Z., Kerimova T., Abdullayev N., Mamedova I., Mamedov N.
卷 51, 编号 5 (2017) Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering PDF
(Eng)
Mezdrogina M., Vinogradov A., Levitskii V., Terukova E., Kozhanova Y., Aglikov A.
卷 51, 编号 5 (2017) Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs PDF
(Eng)
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
卷 51, 编号 4 (2017) On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) PDF
(Eng)
Muntyanu F., Gheorghitsa E., Gilewski A., Chistol V., Bejan V., Munteanu V.
卷 51, 编号 3 (2017) Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength PDF
(Eng)
Bannaya V.
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