| 期 |
标题 |
文件 |
| 卷 52, 编号 2 (2018) |
Conductivity of Ga2O3–GaAs Heterojunctions |
(Eng)
|
|
Kalygina V., Remizova I., Tolbanov O.
|
| 卷 52, 编号 2 (2018) |
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime |
(Eng)
|
|
Ormont M., Zvyagin I.
|
| 卷 52, 编号 2 (2018) |
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals |
(Eng)
|
|
Mustafaeva S., Asadov S., Kerimova E.
|
| 卷 52, 编号 2 (2018) |
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures |
(Eng)
|
|
Kažukauskas V., Garbačauskas R., Savicki S.
|
| 卷 52, 编号 1 (2018) |
On Mobility of Definite Energy Charge Carriers |
(Eng)
|
|
Belousov Y., Gorelkin V., Chernousov I.
|
| 卷 52, 编号 1 (2018) |
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium |
(Eng)
|
|
Musaev A.
|
| 卷 51, 编号 12 (2017) |
Radiation-produced defects in germanium: Experimental data and models of defects |
(Eng)
|
|
Emtsev V., Kozlovski V., Poloskin D., Oganesyan G.
|
| 卷 51, 编号 12 (2017) |
Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method |
(Eng)
|
|
El Ouchdi A., Bouazza B., Belhadji Y., Massoum N.
|
| 卷 51, 编号 10 (2017) |
Effects of local photoexcitation of high-concentration charge carriers in silicon |
(Eng)
|
|
Musaev A.
|
| 卷 51, 编号 9 (2017) |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
(Eng)
|
|
Seredin P., Goloshchapov D., Lenshin A., Lukin A., Khudyakov Y., Arsentyev I., Prutskij T.
|
| 卷 51, 编号 9 (2017) |
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper |
(Eng)
|
|
Prokofieva L., Nasredinov F., Konstantinov P., Shabaldin A.
|
| 卷 51, 编号 9 (2017) |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
(Eng)
|
|
Karachinsky L., Novikov I., Blokhin S., Bobrov M., Zadiranov Y., Troshkov S., Egorov A., Babichev A., Kryzhanovskaya N., Moiseev E., Gladyshev A.
|
| 卷 51, 编号 9 (2017) |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
(Eng)
|
|
Sobolev N., Kalyadin A., Shek E., Shtel’makh K.
|
| 卷 51, 编号 8 (2017) |
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals |
(Eng)
|
|
Sobolev V., Perevoshchikov D.
|
| 卷 51, 编号 8 (2017) |
Impurity levels in Hg3In2Te6 crystals |
(Eng)
|
|
Chupyra S., Grushka O., Bilichuk S.
|
| 卷 51, 编号 7 (2017) |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
(Eng)
|
|
Abdullayev N., Jafarli K., Aliguliyeva K., Aliyeva L., Kahramanov S., Nemov S.
|
| 卷 51, 编号 7 (2017) |
Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it |
(Eng)
|
|
Gaidar G., Baranskii P.
|
| 卷 51, 编号 6 (2017) |
Electrical properties of ZnSe crystals doped with transition elements |
(Eng)
|
|
Nitsuk Y., Vaksman Y.
|
| 卷 51, 编号 6 (2017) |
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field |
(Eng)
|
|
Rekhviashvili S., Alikhanov A.
|
| 卷 51, 编号 6 (2017) |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
(Eng)
|
|
Galiev G., Klochkov A., Vasil’evskii I., Klimov E., Pushkarev S., Vinichenko A., Khabibullin R., Maltsev P.
|
| 卷 51, 编号 5 (2017) |
Ab initio calculations of phonon dispersion in CdGa2Se4 |
(Eng)
|
|
Dzhakhangirli Z., Kerimova T., Abdullayev N., Mamedova I., Mamedov N.
|
| 卷 51, 编号 5 (2017) |
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering |
(Eng)
|
|
Mezdrogina M., Vinogradov A., Levitskii V., Terukova E., Kozhanova Y., Aglikov A.
|
| 卷 51, 编号 5 (2017) |
Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs |
(Eng)
|
|
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
|
| 卷 51, 编号 4 (2017) |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) |
(Eng)
|
|
Muntyanu F., Gheorghitsa E., Gilewski A., Chistol V., Bejan V., Munteanu V.
|
| 卷 51, 编号 3 (2017) |
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength |
(Eng)
|
|
Bannaya V.
|
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