Issue |
Title |
File |
Vol 51, No 4 (2017) |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
 (Eng)
|
Slapovskiy D.N., Pavlov A.Y., Pavlov V.Y., Klekovkin A.V.
|
Vol 51, No 4 (2017) |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
 (Eng)
|
Vexler M.I., Illarionov Y.Y., Grekhov I.V.
|
Vol 51, No 3 (2017) |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
 (Eng)
|
Parkhomenko H.P., Solovan M.N., Mostovyi A.I., Ulyanytsky K.S., Maryanchuk P.D.
|
Vol 51, No 3 (2017) |
Formation of silicon nanocrystals in multilayer nanoperiodic a-SiOx/insulator structures from the results of synchrotron investigations |
 (Eng)
|
Turishchev S.Y., Terekhov V.A., Koyuda D.A., Ershov A.V., Mashin A.I., Parinova E.V., Nesterov D.N., Grachev D.A., Karabanova I.A., Domashevskaya E.P.
|
Vol 51, No 3 (2017) |
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics |
 (Eng)
|
Kirsanov N.Y., Latukhina N.V., Lizunkova D.A., Rogozhina G.A., Stepikhova M.V.
|
Vol 51, No 3 (2017) |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
 (Eng)
|
Mintairov S.A., Kalyuzhnyy N.A., Nadtochiy A.M., Maximov M.V., Rouvimov S.S., Zhukov A.E.
|
Vol 51, No 3 (2017) |
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field |
 (Eng)
|
Balagula R.M., Vinnichenko M.Y., Makhov I.S., Sofronov A.N., Firsov D.A., Vorobjev L.E.
|
Vol 51, No 3 (2017) |
On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses |
 (Eng)
|
Lipatova Z.O., Kolobkova E.V., Babkina A.N., Nikonorov N.V.
|
Vol 51, No 3 (2017) |
Valence-band offsets in strained SiGeSn/Si layers with different tin contents |
 (Eng)
|
Bloshkin A.A., Yakimov A.I., Timofeev V.A., Tuktamyshev A.R., Nikiforov A.I., Murashov V.V.
|
Vol 51, No 3 (2017) |
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition |
 (Eng)
|
Kopach V.R., Klepikova K.S., Klochko N.P., Khrypunov G.S., Korsun V.E., Lyubov V.M., Kirichenko M.V., Kopach A.V.
|
Vol 51, No 2 (2017) |
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction |
 (Eng)
|
Avakyants L.P., Aslanyan A.E., Bokov P.Y., Polozhentsev K.Y., Chervyakov A.V.
|
Vol 51, No 2 (2017) |
New mechanism of semiconductor polarization at the interface with an organic insulator |
 (Eng)
|
Yafyasov A.M., Bogevolnov V.B., Ryumtsev E.I., Kovshik A.P., Mikhailovski V.Y.
|
Vol 51, No 2 (2017) |
Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices |
 (Eng)
|
Shuleiko D.V., Zabotnov S.V., Zhigunov D.M., Zelenina A.A., Kamenskih I.A., Kashkarov P.K.
|
Vol 51, No 2 (2017) |
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth |
 (Eng)
|
Sitnikov S.V., Kosolobov S.S., Latyshev A.V.
|
Vol 51, No 1 (2017) |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
 (Eng)
|
Krishtopenko S.S., Ikonnikov A.V., Maremyanin K.V., Bovkun L.S., Spirin K.E., Kadykov A.M., Marcinkiewicz M., Ruffenach S., Consejo C., Teppe F., Knap W., Semyagin B.R., Putyato M.A., Emelyanov E.A., Preobrazhenskii V.V., Gavrilenko V.I.
|
Vol 51, No 1 (2017) |
Spin-dependent tunneling recombination in heterostructures with a magnetic layer |
 (Eng)
|
Denisov K.S., Rozhansky I.V., Averkiev N.S., Lähderanta E.
|
Vol 50, No 10 (2016) |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures |
 (Eng)
|
Bagraev N.T., Chernev A.L., Klyachkin L.E., Malyarenko A.M., Emel’yanov A.K., Dubina M.V.
|
Vol 50, No 9 (2016) |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
 (Eng)
|
Chatbouri S., Troudi M., Sghaier N., Kalboussi A., Aimez V., Drouin D., Souifi A.
|
Vol 50, No 9 (2016) |
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide |
 (Eng)
|
Altuhov V.I., Kasyanenko I.S., Sankin A.V., Bilalov B.A., Sigov A.S.
|
Vol 50, No 9 (2016) |
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena |
 (Eng)
|
Petrov V.N., Sidorov V.G., Talnishnikh N.A., Chernyakov A.E., Shabunina E.I., Shmidt N.M., Usikov A.S., Helava H., Makarov Y.N.
|
Vol 50, No 9 (2016) |
Optical properties of hybrid quantum-confined structures with high absorbance |
 (Eng)
|
Nadtochiy A.M., Kalyuzhnyy N.A., Mintairov S.A., Payusov A.S., Rouvimov S.S., Maximov M.V., Zhukov A.E.
|
Vol 50, No 9 (2016) |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
 (Eng)
|
Gladyshev A.G., Novikov I.I., Karachinsky L.Y., Denisov D.V., Blokhin S.A., Blokhin A.A., Nadtochiy A.M., Kurochkin A.S., Egorov A.Y.
|
Vol 50, No 8 (2016) |
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime |
 (Eng)
|
Pokhabov D.A., Pogosov A.G., Budantsev M.V., Zhdanov E.Y., Bakarov A.K.
|
Vol 50, No 8 (2016) |
Conduction in titanium dioxide films and metal–TiO2–Si structures |
 (Eng)
|
Kalygina V.M., Egorova I.M., Prudaev I.A., Tolbanov O.P.
|
Vol 50, No 8 (2016) |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
 (Eng)
|
Solovan M.N., Mostovyi A.I., Brus V.V., Maistruk E.V., Maryanchuk P.D.
|
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