作者的详细信息
Ismailov, A. M.
期 | 栏目 | 标题 | 文件 |
卷 51, 编号 3 (2017) | Physics of Semiconductor Devices | Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure | |
卷 53, 编号 15 (2019) | Electronics Materials | Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature |