| Edição |
Seção |
Título |
Arquivo |
| Volume 51, Nº 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| Volume 51, Nº 4 (2017) |
Physics of Semiconductor Devices |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
| Volume 51, Nº 6 (2017) |
Electronic Properties of Semiconductors |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
|
| Volume 52, Nº 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
|
| Volume 52, Nº 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation |
|
| Volume 53, Nº 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
|
