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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Kyuregyan, A. S.

Issue Section Title File
Vol 50, No 3 (2016) Electronic Properties of Semiconductors On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Vol 50, No 7 (2016) Physics of Semiconductor Devices Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
Vol 51, No 9 (2017) Physics of Semiconductor Devices High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process
Vol 51, No 9 (2017) Physics of Semiconductor Devices High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency
Vol 52, No 3 (2018) Physics of Semiconductor Devices Optimal Doping of Diode Current Interrupters
Vol 53, No 4 (2019) Physics of Semiconductor Devices Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode
Vol 53, No 4 (2019) Physics of Semiconductor Devices High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects
Vol 53, No 7 (2019) Physics of Semiconductor Devices High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation
Vol 53, No 7 (2019) Physics of Semiconductor Devices High-Voltage Diffused Step Recovery Diodes: II. Theory
 

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