Автор туралы ақпарат

Lazarenko, A. A.

Шығарылым Бөлім Атауы Файл
Том 50, № 5 (2016) Physics of Semiconductor Devices GaAs/InGaAsN heterostructures for multi-junction solar cells
Том 51, № 2 (2017) Fabrication, Treatment, and Testing of Materials and Structures Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates
Том 51, № 4 (2017) Physics of Semiconductor Devices Optimization of vertical cavity lasers with intracavity metal layers
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy