| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
|
| Том 51, № 9 (2017) |
Electronic Properties of Semiconductors |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
|
| Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
| Том 52, № 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
|
| Том 53, № 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
