作者的详细信息
Murel, A. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron | |
| 卷 51, 编号 8 (2017) | Erratum | Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” | |
| 卷 51, 编号 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |