| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Strained multilayer structures with pseudomorphic GeSiSn layers |
|
| Том 51, № 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Valence-band offsets in strained SiGeSn/Si layers with different tin contents |
|
| Том 52, № 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
|
