作者的详细信息

Vainilovich, A. G.

栏目 标题 文件
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3