作者的详细信息
Zdoroveishev, A. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 1 (2016) | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer | |
| 卷 53, 编号 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |