作者的详细信息
Radishchev, D. B.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron | |
| 卷 51, 编号 8 (2017) | Erratum | Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” | |
| 卷 53, 编号 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |