作者的详细信息
Chizhevskii, E. G.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm | |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm | |
| 卷 52, 编号 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |