Автор туралы ақпарат
Fomin, E. V.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 53, № 4 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film | |
| Том 53, № 11 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |