作者的详细信息
Ilchenko, E. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 1 (2018) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Electron Effective Mass and g Factor in Wide HgTe Quantum Wells | |
| 卷 52, 编号 15 (2018) | Erratum | Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |