Автор туралы ақпарат

Malysheva, E. I.

Шығарылым	Бөлім	Атауы	Файл
Том 50, № 1 (2016)	XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015	Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
Том 52, № 8 (2018)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions