作者的详细信息
Malysheva, E. I.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 1 (2016) | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer | |
| 卷 52, 编号 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |