作者的详细信息
Sherstnev, E. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 4 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |