| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of deep levels in GaAs p–i–n structures |
|
| 卷 51, 编号 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism |
|
| 卷 52, 编号 2 (2018) |
Electronic Properties of Semiconductors |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
|
| 卷 52, 编号 14 (2018) |
Plasmonics |
Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy |
|
