作者的详细信息
Medvedev, G. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 3 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation | |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |