作者的详细信息
Umnyagin, G. M.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides |