| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 2 (2016) |
Electronic Properties of Semiconductors |
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys |
|
| 卷 50, 编号 5 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications |
|
| 卷 50, 编号 6 (2016) |
Electronic Properties of Semiconductors |
Optical properties of In2Se3 thin films |
|
| 卷 50, 编号 9 (2016) |
Electronic Properties of Semiconductors |
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 |
|
| 卷 51, 编号 3 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
|
| 卷 51, 编号 8 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion |
|
| 卷 51, 编号 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
|
| 卷 52, 编号 8 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Crystal Structure and Band Gap of (MnIn2S4)1–x • (AgIn5S8)x Alloys |
|
| 卷 52, 编号 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties |
|
| 卷 53, 编号 12 (2019) |
Electronic Properties of Semiconductors |
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals |
|
