| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
GaAs structures with a gate dielectric based on aluminum-oxide layers |
|
| Volume 50, Nº 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
|
| Volume 51, Nº 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Features of the selective manganese doping of GaAs structures |
|
| Volume 52, Nº 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
|
| Volume 53, Nº 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition |
|
