Informaçao sobre o Autor
Loshkarev, I. D.
| Edição | Seção | Título | Arquivo |
| Volume 52, Nº 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands | |
| Volume 53, Nº 4 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |