作者的详细信息
Loshkarev, I. D.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands | |
| 卷 53, 编号 4 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |