Автор туралы ақпарат
Nikitina, I. P.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 4 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy | |
| Том 50, № 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates | |
| Том 51, № 8 (2017) | Spectroscopy, Interaction with Radiation | Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers | |
| Том 53, № 6 (2019) | Physics of Semiconductor Devices | Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |