Автор туралы ақпарат
Osinnykh, I. V.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 52, № 2 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |