| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
|
| Том 50, № 6 (2016) |
Physics of Semiconductor Devices |
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass |
|
| Том 50, № 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium |
|
| Том 50, № 9 (2016) |
Physics of Semiconductor Devices |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
|
| Том 50, № 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
|
| Том 50, № 10 (2016) |
Electronic Properties of Semiconductors |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
|
| Том 51, № 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
| Том 51, № 7 (2017) |
Physics of Semiconductor Devices |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
|
| Том 52, № 2 (2018) |
Surfaces, Interfaces, and Thin Films |
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
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