Informaçao sobre o Autor

Asryan, L. V.

Edição	Seção	Título	Arquivo
Volume 50, Nº 5 (2016)	Physics of Semiconductor Devices	Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Volume 50, Nº 10 (2016)	Physics of Semiconductor Devices	Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
Volume 51, Nº 2 (2017)	Physics of Semiconductor Devices	Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Volume 51, Nº 7 (2017)	Physics of Semiconductor Devices	Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
Volume 52, Nº 12 (2018)	Physics of Semiconductor Devices	Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers
Volume 52, Nº 14 (2018)	Lasers and Optoelectronic Devices	A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers