作者的详细信息

Kalinnikov, M. I.

期 栏目 标题 文件
卷 53, 编号 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers