Informaçao sobre o Autor
Mizerov, M. N.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| Volume 52, Nº 14 (2018) | Lasers and Optoelectronic Devices | Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure | |
| Volume 53, Nº 2 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method | |
| Volume 53, Nº 11 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |