作者的详细信息
Scheglov, M. P.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 6 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy | |
| 卷 53, 编号 11 (2019) | Surfaces, Interfaces, and Thin Films | Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |