| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
|
| Том 50, № 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
|
| Том 50, № 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
|
| Том 51, № 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics |
|
| Том 52, № 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
|
| Том 53, № 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
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