| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
|
| Том 51, № 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
|
| Том 52, № 2 (2018) |
Physics of Semiconductor Devices |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
|
| Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
|
| Том 52, № 10 (2018) |
Physics of Semiconductor Devices |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
|
| Том 52, № 13 (2018) |
Physics of Semiconductor Devices |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
| Том 53, № 6 (2019) |
Physics of Semiconductor Devices |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
|
