| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
|
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
|
| Том 51, № 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
|
| Том 51, № 9 (2017) |
Physics of Semiconductor Devices |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
|
| Том 52, № 7 (2018) |
Physics of Semiconductor Devices |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
|
| Том 53, № 1 (2019) |
Physics of Semiconductor Devices |
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |
|
