| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 5 (2016) |
Physics of Semiconductor Devices |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
|
| Volume 50, Nº 6 (2016) |
Physics of Semiconductor Devices |
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass |
|
| Volume 50, Nº 9 (2016) |
Physics of Semiconductor Devices |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
|
| Volume 50, Nº 10 (2016) |
Electronic Properties of Semiconductors |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
| Volume 50, Nº 10 (2016) |
Physics of Semiconductor Devices |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
|
| Volume 51, Nº 7 (2017) |
Physics of Semiconductor Devices |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
|
| Volume 52, Nº 2 (2018) |
Surfaces, Interfaces, and Thin Films |
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
|
| Volume 52, Nº 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
| Volume 52, Nº 12 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating |
|
| Volume 53, Nº 6 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities |
|
| Volume 53, Nº 6 (2019) |
Physics of Semiconductor Devices |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
|
| Volume 53, Nº 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
|
