Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Timoshina, N. Kh.
Issue
Section
Title
File
Vol 50, No 7 (2016)
Physics of Semiconductor Devices
On current spreading in solar cells: a two-parameter tube model
Vol 50, No 9 (2016)
Physics of Semiconductor Devices
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
Vol 50, No 10 (2016)
Physics of Semiconductor Devices
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
Vol 51, No 1 (2017)
Physics of Semiconductor Devices
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
Vol 51, No 5 (2017)
Physics of Semiconductor Devices
Laser (λ = 809 nm) power converter based on GaAs
Vol 51, No 5 (2017)
Physics of Semiconductor Devices
Formation of a
p
-type emitter with the involvement of surfactants in GaAs photoelectric converters
Vol 52, No 3 (2018)
Physics of Semiconductor Devices
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
Vol 52, No 13 (2018)
Physics of Semiconductor Devices
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)
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