English
Kazakh
Português (Brasil)
Русский
简体中文
Page Header
Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
Menu     Archives
  • Home
  • About the Journal
    • Editorial Team
    • Editorial Policies
    • Author Guidelines
    • About the Journal
  • Issues
    • Search
    • Current
    • Retracted articles
    • Archives
  • Contact
  • All Journals
User
Forgot password? Register
Notifications
  • View
  • Subscribe
Search
Browse
  • By Issue
  • By Author
  • By Title
  • By Sections
  • Other Journals
Subscription Login to verify subscription
Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
×
User
Forgot password? Register
Notifications
  • View
  • Subscribe
Search
Browse
  • By Issue
  • By Author
  • By Title
  • By Sections
  • Other Journals
Subscription Login to verify subscription
Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Torkhov, N. A.

Issue Section Title File
Vol 52, No 10 (2018) Physics of Semiconductor Devices Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier
Vol 53, No 1 (2019) Surfaces, Interfaces, and Thin Films Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures
Vol 53, No 12 (2019) Physics of Semiconductor Devices On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges
 

JOURNALS

Journals list

Search articles

LEGAL INFORMATION

Privacy Policy

User agreement

 

RCSI CONTATCS

phone: +7 (499) 941-01-15

address: Leninsky Prospekt 32a
Moscow, 119334

E-mail: info@rcsi.science

Technical support

E-mail: journals_support@rcsi.science 

PLATFORM POWERED BY

RUSSIAN CENTRE
FOR SCIENTIFIC INFORMATION

TOP