作者的详细信息
Aruev, P. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Si:Si LEDs with room-temperature dislocation-related luminescence | |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties | |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Electroluminescence properties of LEDs based on electron-irradiated p-Si |