| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 5 (2016) |
Physics of Semiconductor Devices |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
|
| 卷 50, 编号 7 (2016) |
Electronic Properties of Semiconductors |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
|
| 卷 50, 编号 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
|
| 卷 51, 编号 3 (2017) |
Physics of Semiconductor Devices |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
|
| 卷 51, 编号 9 (2017) |
Physics of Semiconductor Devices |
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode |
|
| 卷 52, 编号 1 (2018) |
Physics of Semiconductor Devices |
On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel |
|
| 卷 52, 编号 10 (2018) |
Physics of Semiconductor Devices |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
|
| 卷 52, 编号 12 (2018) |
Physics of Semiconductor Devices |
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes |
|
| 卷 53, 编号 3 (2019) |
Physics of Semiconductor Devices |
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) |
|
| 卷 53, 编号 6 (2019) |
Physics of Semiconductor Devices |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
|
| 卷 53, 编号 10 (2019) |
Physics of Semiconductor Devices |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
| 卷 53, 编号 12 (2019) |
Electronic Properties of Semiconductors |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
|
