| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
|
| 卷 50, 编号 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
|
| 卷 50, 编号 2 (2016) |
Physics of Semiconductor Devices |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| 卷 50, 编号 10 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
|
| 卷 51, 编号 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| 卷 51, 编号 4 (2017) |
Physics of Semiconductor Devices |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
|
| 卷 51, 编号 4 (2017) |
Physics of Semiconductor Devices |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
|
| 卷 51, 编号 4 (2017) |
Physics of Semiconductor Devices |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
| 卷 51, 编号 6 (2017) |
Electronic Properties of Semiconductors |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
|
| 卷 51, 编号 9 (2017) |
Physics of Semiconductor Devices |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
|
| 卷 52, 编号 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
|
