| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 7 (2016) |
Electronic Properties of Semiconductors |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
|
| Volume 51, Nº 4 (2017) |
Amorphous, Vitreous, and Organic Semiconductors |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
|
| Volume 52, Nº 6 (2018) |
Electronic Properties of Semiconductors |
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
|
| Volume 53, Nº 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
|
| Volume 53, Nº 5 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
|
